fp7-nanoCOPS --> research

# FP7-nanoCOPS Research

### Electro-thermal-stress coupled simulation for Power-MOS device design

**Electro-thermal model**: A more accurate field model for the electrical potentials and for the temperature; compact models for the individual channels or channel segments and a compact thermal model for the substrate.**Analyses**: Accurate determination of the thermal sources and sinks and boundaries; high-end processing techniques for finding hot spots and critical segments; perform stress calculations; determine efficiently ageing; upgrade the tools to deal with power transistors with 100 million mesh nodes or more.**Include variability and reliability constraints**(parameter variations). Derive model order reduction methods (MOR) for capturing the input/output relations of the power transistor; reduced models for the individual field equations require the other field variables as inputs/parameters, thus, if they are entered as parameters, parametric MOR methods are needed to preserve these quantities as symbolic variables in the reduced models**Electro-thermal-stress**: Use the available temperature, current density and stress data to make first estimations or predictions of device, bonding life times, electro-migration limitations and some thermal induced failures like passivation cracks

### Transceiver designs at high carrier frequencies and baseband waveforms such as OFDM (Orthogonal Frequency Division Multiplex)

- Transient solvers based on the
**multirate envelope**method in conjunction with spline/wavelet bases for an optimal signal representation. Enhancements for EM-heat simulations. - Improved
**co-simulation**or even a**holistic/monolithic circuit-EM-heat simulation**approach for accurately predicting the signal waveforms in the presence of crosstalk, substrate coupling, mismatch, etc. - Improved
**yield analysis**based on statistical tools for reliability from uncertainty quantification. - Efficiently predict
**ageing**effects: lifetime models for electro-migration, thermal induced failures, the construction of accurate probability distributions or probability density functions